View STP22NF03L07_4121567.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STP22NF03L
N-channel 30V - 0.0038 - 22A - TO-220 STripFETTM II Power MOSFET
Features
Type STP22NF03L

VDSS 30V
RDS(on) <0.05
ID 22A
Exceptional dv/dt capability Low gate charge at 100C Application oriented characterization 100% avalanche tested
TO-220
1 3 2
Application
Switching applications
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking P22NF03L@ Package TO-220 Packaging Tube
Order code STP22NF03L
September 2007
Rev 4
1/12
www.st.com 12
Contents
STP22NF03L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP22NF03L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VDGR VGS ID ID(1) IDM(1) Ptot dv/dt(2) EAS
(3)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature -55 to 175 Max. operating junction temperature C Value 30 30 15 22 16 88 45 0.3 6 200 Unit V V V A A A W W/C V/ns mJ
Tstg Tj
1. Pulse width limited by safe operating area. 2. ISD 22A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting Tj = 25 C, ID = 11A, VDD = 15V
Table 3.
Symbol Rthj-case Rthj-amb TJ
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 3.33 62.5 300 Unit C/W C/W C
3/12
Electrical characteristics
STP22NF03L
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 11A VGS = 5V, ID = 11A 1 0.038 0.045 0.05 0.06 Min. 30 1 10 100 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 5.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15V , ID = 11A Min. Typ. 7 330 90 40 13 4 12 5 6.5 3.6 2 9 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0
VDD = 15V, ID = 11A RG = 4.7 VGS = 5V (see Figure 13) VDD = 24V, ID = 22A, VGS = 5V (see Figure 14)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
4/12
STP22NF03L
Electrical characteristics
Table 6.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 22A, VGS = 0 30 18 1.2 Test conditions Min. Typ. Max. 22 88 1.5 Unit A A V ns nC A
ISD = 22A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 15V, Tj = 150C Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
5/12
Electrical characteristics
STP22NF03L
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/12
STP22NF03L Figure 8. Gate charge vs. gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
7/12
Test circuit
STP22NF03L
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/12
STP22NF03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP22NF03L
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
10/12
STP22NF03L
Revision history
5
Revision history
Table 7.
Date 09-Sep-2004 09-Aug-2006 20-Feb-2007 03-Sep-2007
Document revision history
Revision 1 2 3 4 Changes Datasheet according to PCN DSG-TRA/04/532 New template, no content change Typo mistake on page 1 Figure 2: Safe operating area has been update
11/12
STP22NF03L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
12/12

▲Up To Search▲

Price & Availability of STP22NF03L07

	To Download STP22NF03L07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .